EMB1412集成电路（IC）的栅极驱动器规格书PDF中文资料

EMB1412属于集成电路（IC）的栅极驱动器。由美国德州仪器公司制造生产的EMB1412栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。

1 Features

1• Compound CMOS and Bipolar Outputs Reduce

Output Current Variation

• 7 A Sink/3 A Source Current

• Fast Propagation Times (25 ns Typical)

• Fast Rise and Fall Times (14 ns/12 ns Rise/Fall

with 2 nF Load)

• Inverting and Non-Inverting Inputs Provide Either

Configuration with a Single Device

• Supply Rail Under-Voltage Lockout Protection

• Dedicated Input Ground (IN_REF) for Split Supply

or Single Supply Operation

• Thermally Enhanced 8-Pin VSSOP Package

• Output Swings from VCC to VEE Which can be

Negative Relative to Input Ground

2 Applications

• Li-Ion Battery Management Systems

• Hybrid and Electric Vehicles

• Grid Storage

• 48 V Systems Supply

• UPS

3 Description

The EMB1412 MOSFET gate driver provides high

peak gate drive current in 8-lead exposed-pad

VSSOP package, with improved power dissipation

required for high frequency operation. The compound

output driver stage includes MOS and bipolar

transistors operating in parallel that together sink

more than 7-A peak from capacitive loads. Combining

the unique characteristics of MOS and bipolar

devices reduces drive current variation with voltage

and temperature. Under-voltage lockout protection is

provided to prevent damage to the MOSFET due to

insufficient gate turn-on voltage. The EMB1412

provides both inverting and non-inverting inputs to

satisfy requirements for inverting and non-inverting

gate drive with a single device type.