EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

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德州仪器

MOSFET Gate Driver

文件：767.08 Kbytes 页数：15 Pages

TI

德州仪器

MOSFET 栅极驱动器

The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7- • Compound CMOS and Bipolar Outputs Reduce Output Current Variation\n• 7 A Sink/3 A Source Current\n• Fast Propagation Times (25 ns Typical)\n• Fast Rise and Fall Times (14 ns/12 ns Rise Fall with 2 nF Load)\n• Inverting and Non-Inverting Inputs Provide Either Configuration with a Single Device\n• S;

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德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器