ECH8资料datasheet下载行情报价三洋第10页-114ic电子网

首页 >ECH8>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
ECH8656	文件：388.19 Kbytes Page：4 Pages	General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=13mΩ (typ.) • 1.8V drive • Halogen free compliance • Nch + Nch MOSFET • Protection diode in 文件：388.19 Kbytes 页数：4 Pages	SANYO 三洋	SANYO
ECH8656-TL-H	文件：313.43 Kbytes Page：7 Pages	N-Channel Power MOSFET Features • ON-resistance RDS(on)1=13mΩ (typ.) • 1.8V drive • Halogen free compliance • Nch + Nch MOSFET • Protection diode in 文件：313.43 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
ECH8657	文件：309.79 Kbytes Page：7 Pages	N-Channel Power MOSFET Features • 4V drive • Halogen free compliance • Protection diode in 文件：309.79 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
ECH8657	文件：351.77 Kbytes Page：4 Pages	N-Channel Silicon MOSFET General-Purpose Switching Device Applications N-Channel Silicon MOSFET Features • 4V drive • Halogen free compliance • Protection diode in 文件：351.77 Kbytes 页数：4 Pages	SANYO 三洋	SANYO
ECH8657-TL-H	文件：309.79 Kbytes Page：7 Pages	N-Channel Power MOSFET Features • 4V drive • Halogen free compliance • Protection diode in 文件：309.79 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
ECH8659	文件：59.98 Kbytes Page：4 Pages	N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • 4V drive • Composite type, facilitating high-density mounting • Halogen free compliance • Protection diode in 文件：59.98 Kbytes 页数：4 Pages	SANYO 三洋	SANYO
ECH8659	文件：312.8 Kbytes Page：7 Pages	N-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • 4V drive • Composite type, 文件：312.8 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
ECH8659	文件：471 Kbytes Page：5 Pages	Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • 4V drive • Composite type, 文件：471 Kbytes 页数：5 Pages	ONSEMI 安森美半导体	ONSEMI
ECH8659-TL-H	文件：312.8 Kbytes Page：7 Pages	N-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • 4V drive • Composite type, 文件：312.8 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
ECH8659-TL-H	文件：471 Kbytes Page：5 Pages	Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • 4V drive • Composite type, 文件：471 Kbytes 页数：5 Pages	ONSEMI 安森美半导体	ONSEMI

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技术参数

Pb-free：
Pb
Halide free：
H
Status：
Active
Polarity：
PNP
Type：
Low VCE(sat)
VCE(sat) Max (V)：
0.135
IC Cont. (A)：
12
VCEO Min (V)：
30
VCBO (V)：
30
VEBO (V)：
6
VBE(sat) (V)：
0.85
hFE Min：
200
hFE Max：
560
fT Min (MHz)：
140
PTM Max (W)：
1.6
Package Type：
SOT-28 FL/ECH-8

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市毅创腾电子科技有限公司	ECH8601-V-TL-E	SANYO	23+	SMD	3200	绝对全新原装!优势供货渠道!特价!请放心订购!	询价
深圳市联世界科技有限公司	ECH8309-TL-H	ON	24+/25+		3000	原装正品现货库存价优	询价
深圳市一线半导体有限公司	ECH8601-TL-E	SANYO	24+	SOP-8	1469		询价
深圳市弘为电子有限公司	ECH8601-TL	SANYO	24+	TSSOP-8	3000	原装现货假一罚十	询价
深圳市恒创达实业有限公司	ECH8401	SANYO	17+		6200	100%原装正品现货	询价
深圳市卓越微芯电子有限公司	ECH8693R-TL-W	ON	25+	DFN	99000	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市凌旭科技有限公司	ECH8606	SANYO	2016+	SSOP-8	3500	只做原装,假一罚十,公司可开17%增值税发票!	询价
齐创科技(上海,北京,青岛)有限公司	ECH8604-TL-E	ON	23+	SOT23	5000	原装正品,假一罚十	询价
深圳市豪迈兴电子有限公司	ECH8402-TL-E	SANYO	24+	SOT23-8	8762	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市益百分电子有限公司	ECH8601M-TL-H	SANYO	13+	SMD8	44000	原装现货价格有优势量大可以发货	询价

更多ECH8供应商更新时间2026-1-25 10:51:00

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