Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • 4V drive • Composite type,

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ONSEMI

安森美半导体

N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting. • 4V drive. • Halogen free compliance.

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SANYO

三洋

Complementary Dual Power MOSFET

Features • ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: ON-resistance RDS(on)1=30mΩ(typ.) • The ECH8661 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting • 4V drive • Halogen free compliance

文件：417.86 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: ON-resistance RDS(on)1=30mΩ(typ.) • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density m

文件：442.48 Kbytes 页数：6 Pages

SANYO

三洋

Complementary Dual Power MOSFET

Features • ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: ON-resistance RDS(on)1=30mΩ(typ.) • The ECH8661 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting • 4V drive • Halogen free compliance

文件：417.86 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET

Features • Low ON-resistance • 2.5V drive • Halogen free compliance • Protection diode in

文件：317.56 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance • 2.5V drive • Halogen free compliance • Protection diode in

文件：61.4 Kbytes 页数：4 Pages

SANYO

三洋

N-Channel Power MOSFET

Features • Low ON-resistance • 2.5V drive • Halogen free compliance • Protection diode in

文件：317.56 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance. • Built-in gate protection resistor. • 2.5V drive. • Best suited for LiB charging and discharging switch. • Common-drain type. • Halogen free compliance.

文件：67.52 Kbytes 页数：4 Pages

SANYO

三洋

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

N-Channel Silicon MOSFET Features • Low ON-resistance • Built-in gate protection resistor • 2.5V drive • Best suited for LiB charging and discharging switch • Common-drain type • Halogen free compliance • Protection diode in

文件：60.02 Kbytes 页数：4 Pages

SANYO

三洋