ECH8661

N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications

General-PurposeSwitchingDeviceApplications Features •ON-resistanceNch:RDS(on)1=18mΩ(typ.),Pch:ON-resistanceRDS(on)1=30mΩ(typ.) •TheECH8660incorporatesanN-channelMOSFETandaP-channelMOSFETthatfeaturelowON-resistanceandhigh-speedswitching,therebyenablimghigh-densitym

ECH8661

Complementary Dual Power MOSFET

Features •ON-resistanceNch:RDS(on)1=18mΩ(typ.),Pch:ON-resistanceRDS(on)1=30mΩ(typ.) •TheECH8661incorporatesanN-channelMOSFETandaP-channelMOSFETthatfeaturelowON-resistanceandhigh-speedswitching,therebyenablimghigh-densitymounting •4Vdrive •Halogenfreecompliance

ECH8661-TL-H

Complementary Dual Power MOSFET

Features •ON-resistanceNch:RDS(on)1=18mΩ(typ.),Pch:ON-resistanceRDS(on)1=30mΩ(typ.) •TheECH8661incorporatesanN-channelMOSFETandaP-channelMOSFETthatfeaturelowON-resistanceandhigh-speedswitching,therebyenablimghigh-densitymounting •4Vdrive •Halogenfreecompliance

ECH8661-TL-HX

包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 阵列 描述：INTEGRATED CIRCUIT

F8661

SAWBandpassFilterF8661

LY8661

Dual2.0W/CHStereoAudioAmplifierincludeHeadphoneFunction

LY8661EB

Dual2.0W/CHStereoAudioAmplifierincludeHeadphoneFunction

LY8661EL

Dual2.0W/CHStereoAudioAmplifierincludeHeadphoneFunction

LY8661SL

Dual2.0W/CHStereoAudioAmplifierincludeHeadphoneFunction

MAX8661

High-Efficiency,Low-IQ,PMICswithDynamicVoltageManagementforMobileApplications

GeneralDescription TheMAX8660/MAX8661powermanagementICs(PMICs)powerapplicationsprocessors(APs)insmartcellularphones,PDAs,Internetappliances,andotherportabledevices. Features ♦OptimizedforMarvell’sPXA300andArmada100   FamilyofProcessors ♦Protectedto7.5V—Shutdo