N-Channel Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • 4V drive • Composite type,

文件：312.8 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • 4V drive • Composite type,

文件：471 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Features • 4V drive • Composite type, facilitating high-density mounting • Halogen free compliance • Protection diode in

文件：59.98 Kbytes 页数：4 Pages

SANYO

三洋

General-Purpose Switching Device Applications

文件：116.76 Kbytes 页数：7 Pages

SANYO

三洋

双 N 沟道功率 MOSFET 30V，7A，24mΩ

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. • RoHS compliance\n• Environmental Consideration\n• Low On-Resistance\n• Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation\n• ESD Diode-Protected Gate\n• ESD Resistance\n• 4.0V drive\n• Composite type, Facilitating high-density mounting;

ONSEMI

安森美半导体

N-Channel Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • 4V drive • Composite type,

文件：312.8 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • 4V drive • Composite type,

文件：471 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • 4V drive • Composite type,

文件：471 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

General-Purpose Switching Device Applications

文件：116.76 Kbytes 页数：7 Pages

SANYO

三洋

Package：8-SMD，扁平引线；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 阵列 描述：MOSFET 2N-CH 30V 7A ECH8

ONSEMI

安森美半导体