ECH8659中文资料双 N 沟道功率 MOSFET 30V，7A，24mΩ数据手册ONSEMI规格书

描述 Description

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.

特性 Features

• RoHS compliance
• Environmental Consideration
• Low On-Resistance
• Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation
• ESD Diode-Protected Gate
• ESD Resistance
• 4.0V drive
• Composite type, Facilitating high-density mounting

应用 Application

• LiB Protection Switch
• Motor Drive
• DSC, Fan Motor

简介

ECH8659属于分立半导体产品的晶体管-FETMOSFET-阵列。由制造生产的ECH8659晶体管 - FET，MOSFET - 阵列场效应晶体管 (FET) 是使用电场控制电流流动的电子器件。向栅极端子施加电压会改变漏极端子和源极端子之间的电导率。FET 也称为单极型晶体管，因为其涉及单载流子类型的操作。也就是说，FET 在操作中使用电子或空穴作为载流子，而不是同时使用两者。场效应晶体管通常在低频下显示出极高的输入阻抗。