丝印：D2012C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

文件：1.05054 Mbytes 页数：12 Pages

INFINEON

英飞凌

丝印：D2065C5；Package：PG-TO247-3；SiC Silicon Carbide Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved therm

文件：1.1743 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：D2012C5；Package：PG-TO247-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features  No reverse recovery current / no forward recovery  High surge current capability  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Specified dv/dt ruggedness  Pb-free lead plating; RoHS

文件：1.07604 Mbytes 页数：12 Pages

INFINEON

英飞凌

丝印：D2060；Package：SOT23-6L；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 20V,ID = 2.8A RDS(ON)

文件：1.0384 Mbytes 页数：7 Pages

RECTRON

丽正国际

丝印：D20N40；Package：PDFN3X3；N-Channel Power MOSFET

Feature 40v20A Rds (on),

文件：584.27 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：D20N60；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =60V,ID =20A RDS(ON)

文件：1.10606 Mbytes 页数：7 Pages

RECTRON

丽正国际

丝印：D20N60；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =60V,ID =20A RDS(ON)

文件：288.37 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：D20NF06L；Package：DPAK；Automotive-grade N-channel 60 V, 32 mΩ typ., 24 A, STripFET II Power MOSFET in a DPAK package

Features • AEC-Q101 qualified • Exceptional dv/dt capability • 100 avalanche tested • Low gate charge Applications • Switching applications Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize in

文件：605.19 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：D2062；Package：SOP-J8；2ch High Side Switch ICs for USB Devices and Memory Cards

文件：535.67 Kbytes 页数：25 Pages

ROHM

罗姆

丝印：D2062；Package：SOP-J8；2ch High Side Switch ICs for USB Devices and Memory Cards

文件：535.67 Kbytes 页数：25 Pages

ROHM

罗姆