High Current Glass Passivated Molding Single-Phase Bridge Rectifier

文件：317.24 Kbytes 页数：3 Pages

LRC

乐山无线电

Single-phase Silicon Bridge Rectifier Reverse Voltage 200 to 800V Forward Current 20A

文件：135 Kbytes 页数：2 Pages

DACHANG

大昌电子

Single-phase Silicon Bridge Rectifier

文件：135 Kbytes 页数：2 Pages

DACHANG

大昌电子

包装：散装 类别：工具 插拔工具 描述：DIE POINT V AND G PINS

Vector Electronics

丝印：D2097；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Low VCE(sat).VCE(sat) = 0.25V (Typ.)(IC/IB= 4A / 0.1A) Excellent Dc current gain characteristics

文件：1.38154 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：D2097；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Low VCE(sat).VCE(sat) = 0.25V (Typ.)(IC/IB= 4A / 0.1A) Excellent Dc current gain characteristics

文件：1.38154 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：D20SAL；Package：TO-277B；SMD Schottky Barrier Rectifiers

Features - Metal silicon junction, majority carrier conduction. - High forward surge current capability. - High temperature soldering guaranteed: 260°C/10 seconds. - low forward voltage drop.

文件：478.43 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：D20SBL；Package：TO-277B；SMD Schottky Barrier Rectifiers

Features - Metal silicon junction, majority carrier conduction. - High surge capability. - High temperature soldering guaranteed: 260°C/10 seconds. - High current capability, low forward voltage drop.

文件：475.86 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：D20SDL；Package：TO-277B；SMD Schottky Barrier Rectifiers

Features - Metal silicon junction, majority carrier conduction. - High forward surge current capability. - High temperature soldering guaranteed: 260°C/10 seconds. - Robust guarding for over voltage protection. - Low forward voltage drop.

文件：478.79 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：D2065C6；Package：PG-HDSOP-10-1；6th Generation CoolSiC™ 650V SiC Schottky Diode

Features  Best in class forward voltage (1.25 V)  Best in class figure of merit (Qc x VF)  High dv/dt ruggedness (150 V/ns) Benefits  System efficiency improvement  System cost and size savings due to the reduced cooling requirements  Enabling higher frequency and increased power de

文件：652.25 Kbytes 页数：9 Pages

INFINEON

英飞凌