D20

Memory Micromodules General Information for D1, D2 and C Packaging

DESCRIPTION MemoryCardsconsistoftwomainparts:theplasticcard,andtheembeddedMicromodule(which,inturn,carriesthesiliconchip). ■Micromodulesweredevelopedspecificallyfor embeddinginSmartcardsandMemoryCards ■TheMicromoduleprovides: –Supportforthechi

D20

包装：散装 类别：工具 插拔工具 描述：DIE POINT V AND G PINS

D200

Single & Dual Output Miniature, 2W SIP DC/DC Converters

Single&DualOutputMiniature,2WSIPDC/DCConverters KeyFeatures: •2WOutputPower •MiniatureSIPCase •Single&DualOutputs •1,000VDCIsolation •>1.12MHourMTBF •28StandardModels •IndustryStandardPin-Out

D2000

D COMPACT ENCLOSED SWITCH

Features •Highprecisionandlonglife. •Suitableforapplicationsdemandinghighermechanical strength, •Gasketdiaphragmsealprovideshighenvironmental resistance.

D2001UK

METAL GATE RF SILICON FET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET2.5W–28V–1GHzSINGLEENDED FEATURES •SIMPLIFIEDAMPLIFIERDESIGN •SUITABLEFORBROADBANDAPPLICATIONS •LOWCrss •SIMPLEBIASCIRCUITS •LOWNOISE •HIGHGAIN–13dBMINIMUM APPLICATIONS •VHF/UHFCOMMUNICATIONSfrom50MHzto2G

D2003

METAL GATE RF SILICON FET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET5W–28V–1GHzPUSH–PULL FEATURES •SIMPLIFIEDAMPLIFIERDESIGN •SUITABLEFORBROADBANDAPPLICATIONS •VERYLOWCrss •SIMPLEBIASCIRCUITS •LOWNOISE •HIGHGAIN–13dBMINIMUM APPLICATIONS •VHF/UHFCOMMUNICATIONSfrom50MHzto1G

D2003UK

METAL GATE RF SILICON FET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET5W–28V–1GHzPUSH–PULL FEATURES •SIMPLIFIEDAMPLIFIERDESIGN •SUITABLEFORBROADBANDAPPLICATIONS •VERYLOWCrss •SIMPLEBIASCIRCUITS •LOWNOISE •HIGHGAIN–13dBMINIMUM APPLICATIONS •VHF/UHFCOMMUNICATIONSfrom50MHzto1G

D2004UK

METAL GATE RF SILICON FET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET 10W–28V–1GHzPUSH–PULL FEATURES •SIMPLIFIEDAMPLIFIERDESIGN •SUITABLEFORBROADBANDAPPLICATIONS •VERYLOWCrss •SIMPLEBIASCIRCUITS •LOWNOISE •HIGHGAIN–10dBMINIMUM APPLICATIONS •HF/VHF/UHFCOMMUNICATIONSfromDCto2

D2006UK

METAL GATE RF SILICON FET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET15W–28V–1GHzPUSH–PULL FEATURES •SIMPLIFIEDAMPLIFIERDESIGN •SUITABLEFORBROADBANDAPPLICATIONS •VERYLOWCrss •SIMPLEBIASCIRCUITS •LOWNOISE •HIGHGAIN–13dBMINIMUM APPLICATIONS •HF/VHF/UHFCOMMUNICATIONSfromDCto2G

D2007

METAL GATE RF SILICON FET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET5W–28V–400MHzSINGLEENDED FEATURES •SIMPLIFIEDAMPLIFIERDESIGN •SUITABLEFORBROADBANDAPPLICATIONS •LOWCrss •SIMPLEBIASCIRCUITS •LOWNOISE •HIGHGAIN–13dBMINIMUM APPLICATIONS •VHF/UHFCOMMUNICATIONSfromDCto500MHz