Memory Micromodules General Information for D1, D2 and C Packaging

DESCRIPTION Memory Cards consist of two main parts: the plastic card, and the embedded Micromodule (which, in turn, carries the silicon chip). ■ Micromodules were developed specifically for embedding in Smartcards and Memory Cards ■ The Micromodule provides: – Support for the chi

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STMICROELECTRONICS

意法半导体

丝印：D20；Package：SOT323-5L；Precision micropower shunt voltage reference

Features • Fixed 2.048 V, 2.5 V, 3.0 V, 4.096 V and 5.0 V output voltages • Ultra low operating current: 10 μA at 25 °C • High precision @ 25 °C: +/- 0.1% (LM4040A), +/- 0.2% (LM4040B), +/- 0.5 % (LM4040C), +/- 1% (LM4040D) • Very low LF noise: typ.10 μ Vp-p • Stable when used

文件：1.10753 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：D20；Package：SOT23-3L；Precision micropower shunt voltage reference

Features • Fixed 2.048 V, 2.5 V, 3.0 V, 4.096 V and 5.0 V output voltages • Ultra low operating current: 10 μA at 25 °C • High precision @ 25 °C: +/- 0.1% (LM4040A), +/- 0.2% (LM4040B), +/- 0.5 % (LM4040C), +/- 1% (LM4040D) • Very low LF noise: typ.10 μ Vp-p • Stable when used

文件：1.10753 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：D20；Package：SOT-23；SMD Zener

文件：195.91 Kbytes 页数：1 Pages

TAITRON

Single & Dual Output Miniature, 2W SIP DC/DC Converters

Single & Dual Output Miniature, 2W SIP DC/DC Converters Key Features: •2W Output Power •Miniature SIP Case •Single & Dual Outputs •1,000 VDC Isolation •>1.12 MHour MTBF •28 Standard Models •Industry Standard Pin-Out

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MPD

D COMPACT ENCLOSED SWITCH

Features •High precision and long life. •Suitable for applications demanding higher mechanical strength, •Gasket diaphragm seal provides high environmental resistance.

文件：1.0947 Mbytes 页数：4 Pages

HIGHLY

海立电气

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 50 MHz to 2 G

文件：47.45 Kbytes 页数：4 Pages

SEME-LAB

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 50 MHz to 1 G

文件：60.51 Kbytes 页数：4 Pages

SEME-LAB

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 50 MHz to 1 G

文件：60.51 Kbytes 页数：4 Pages

SEME-LAB

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from DC to 2

文件：51.95 Kbytes 页数：4 Pages

SEME-LAB