METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 50 MHz to 1 G

文件：60.51 Kbytes 页数：4 Pages

SEME-LAB

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Very low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 13 dB minimum;

TT Electronics

Low-Voltage Dual SPST Analog Switch

DESCRIPTION The DG2003/2004/2005 are dual single-pole/single-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, fast switching, low on-resistance (rDS(on): 1.2 Ω) and small physical size (MSOP-8), the DG2003/2004/2005 are ideal for

文件：62.03 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

Low-Voltage Dual SPST Analog Switch

features
Low Voltage Operation (1.8 V to 5.5 V)
Low On-Resistance - rDS(on): 1.2

Fast Switching - 14 ns
Low Charge Injection - QINJ: 1 pC
Low Power Consumption
TTL/CMOS Compatible
MSOP-8 Package benefits
Reduced Power Consumption
Simple Logic Interface
High Accur

文件：74.38 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Low-Voltage Dual SPST Analog Switch

DESCRIPTION The DG2003/2004/2005 are dual single-pole/single-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, fast switching, low on-resistance (rDS(on): 1.2 Ω) and small physical size (MSOP-8), the DG2003/2004/2005 are ideal for

文件：62.03 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司