丝印：D2012C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

文件：1.05054 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：D2012C5；Package：PG-TO247-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features  No reverse recovery current / no forward recovery  High surge current capability  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Specified dv/dt ruggedness  Pb-free lead plating; RoHS

文件：1.07604 Mbytes 页数：12 Pages

Infineon

英飞凌