IDK20G120C5

Marking：D2012C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features Revolutionarysemiconductormaterial-SiliconCarbide Noreverserecoverycurrent/noforwardrecovery Temperatureindependentswitchingbehaviour Lowforwardvoltageevenathighoperatingtemperature Tightforwardvoltagedistribution Excellentthermalperformance 

IDK20G120C5XTMA1

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SIC DISCRETE

IDH20G120C5

SiliconCarbideSchottkyDiode

IDW20G120C5B

Revolutionarysemiconductormaterial-SiliconCarbide

IDWD20G120C5

5thGenerationCoolSiCTM1200VSchottkyDiode

Features Noreverserecoverycurrent/noforwardrecovery Highsurgecurrentcapability Temperatureindependentswitchingbehaviour Lowforwardvoltageevenathighoperatingtemperature Tightforwardvoltagedistribution Specifieddv/dtruggedness Pb-freeleadplating;RoHS