丝印：D2012C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

文件：1.05054 Mbytes 页数：12 Pages

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英飞凌

1200 V Silicon Carbide Schottky diode in D²PAK real 2-pin package

\n优势:\n• Enabling higher frequency / increased power density in compact designs\n• System size/cost saving due to reduced heatsink requirements and smaller magnetics\n• Reduce a risk of partial discharge on the surface (real 2-pin)\n• System efficiency improvement over Si diodes\n• System reliabilit;

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Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SIC DISCRETE

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英飞凌

Revolutionary semiconductor material - Silicon Carbide

文件：593.52 Kbytes 页数：10 Pages

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英飞凌

5th Generation CoolSiCTM 1200V Schottky Diode

Features  No reverse recovery current / no forward recovery  High surge current capability  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Specified dv/dt ruggedness  Pb-free lead plating; RoHS

文件：1.07604 Mbytes 页数：12 Pages

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英飞凌