丝印：D20NF06L；Package：DPAK；Automotive-grade N-channel 60 V, 32 mΩ typ., 24 A, STripFET II Power MOSFET in a DPAK package

Features • AEC-Q101 qualified • Exceptional dv/dt capability • 100 avalanche tested • Low gate charge Applications • Switching applications Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize in

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STMICROELECTRONICS

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汽车级N沟道60 V、32 mOhm典型值、24 A STripFET II功率MOSFET，DPAK封装

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu • AEC-Q101 qualified \n• Exceptional dv/dt capability \n• 100% avalanche tested \n• Low gate charge;

ST

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N-CHANNEL 60V - 0.06ohm - 20A TO-220/TO-220FP STripFET II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

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STMICROELECTRONICS

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N-channel 60V - 0.06 - 20A - TO-220/TO-220FP STripFET II Power MOSFET

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STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.08Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电