丝印：D10SAL；Package：TO-277B；SMD Schottky Barrier Rectifiers

Features - Metal silicon junction, majority carrier conduction. - High surge capability. - High temperature soldering guaranteed: 260°C/10 seconds. - High current capability, low forward voltage drop.

文件：474.04 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：D10SCL；Package：TO-277B；SMD Schottky Barrier Rectifiers

Features - Metal silicon junction, majority carrier conduction. - High surge capability. - High temperature soldering guaranteed: 260°C/10 seconds. - High current capability, low forward voltage drop.

文件：474.92 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：D10S45L；Package：TO-277B；SMD Schottky Barrier Rectifiers

Features - Metal silicon junction, majority carrier conduction. - High surge capability. - High temperature soldering guaranteed: 260°C/10 seconds. - High current capability, low forward voltage drop.

文件：473.14 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：D10S60L；Package：TO-277B；SMD Schottky Barrier Rectifiers

Features - Metal silicon junction, majority carrier conduction. - High surge capability. - High temperature soldering guaranteed: 260°C/10 seconds. - High current capability, low forward voltage drop.

文件：474.29 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：D1065C6；Package：PG-HDSOP-10-1；6th Generation CoolSiC™ 650V SiC Schottky Diode

Features  Best in class forward voltage (1.25 V)  Best in class figure of merit (Qc x VF)  High dv/dt ruggedness (150 V/ns) Benefits  System efficiency improvement  System cost and size savings due to the reduced cooling requirements  Enabling higher frequency and increased power de

文件：666.65 Kbytes 页数：9 Pages

Infineon

英飞凌

丝印：D1012C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

文件：1.0387 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：D100E60；Package：PG-TO247-3；Fast Switching Emitter Controlled Diode

Features:  600V Emitter Controlled technology  Fast recovery  Soft switching  Low reverse recovery charge  Low forward voltage  175°C junction operating temperature  Easy paralleling  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models: http://www.in

文件：302.47 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：D100E60；Package：PG-TO-247-3；Fast Switching EmCon Diode

Features: • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • 175 °C junction operating temperature • Easy paralleling • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.com

文件：188.56 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：D1065C5；Package：PG-TO247-3；5t h Generation thinQ!TM 650V SiC Schottky Diode

1 Description Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Qualified accordin

文件：1.1747 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：D1012C5；Package：PG-TO247-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features  No reverse recovery current / no forward recovery  High surge current capability  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Specified dv/dt ruggedness  Pb-free lead plating; RoHS

文件：1.07605 Mbytes 页数：12 Pages

Infineon

英飞凌