1 Description

Features

 Revolutionary semiconductor material - Silicon Carbide

 Benchmark switching behavior

 No reverse recovery/ No forward recovery

 Temperature independent switching behavior

 High surge current capability

 Pb-free lead plating; RoHS compliant

 Qualified according to JEDEC1) for target applications

 Breakdown voltage tested at 22 mA2)

 Optimized for high temperature operation

Benefits

 System efficiency improvement over Si diodes

 System cost / size savings due to reduced cooling requirements

 Enabling higher frequency / increased power density solutions

 Higher system reliability due to lower operating temperatures

 Reduced EMI

Applications

 Switch mode power supply

 Power factor correction

 Solar inverter

 Uninterruptible power supply

ThinQ!™ Generation 5 represents Infineon leading edge technology for the

SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer

technology, the new family of products shows improved efficiency over

all load conditions, resulting from both the improved thermal characteristics

and a lower figure of merit (Qc x Vf).

The new thinQ!™ Generation 5 has been designed to complement our 650V

CoolMOS™ families: this ensures meeting the most stringent application

requirements in this voltage range.

IDW10G65C5属于分立半导体产品 > 二极管 - 整流器 - 单。英飞凌科技公司制造生产的IDW10G65C5二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。