IDW10G65C5

Marking：D1065C5；Package：PG-TO247-3；5t h Generation thinQ!TM 650V SiC Schottky Diode

1Description Features Revolutionarysemiconductormaterial-SiliconCarbide Benchmarkswitchingbehavior Noreverserecovery/Noforwardrecovery Temperatureindependentswitchingbehavior Highsurgecurrentcapability Pb-freeleadplating;RoHScompliant Qualifiedaccordin