丝印：D1065C5；Package：PG-TO247-3；5t h Generation thinQ!TM 650V SiC Schottky Diode

1 Description Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Qualified accordin

文件：1.1747 Mbytes 页数：11 Pages

Infineon

英飞凌

5t h Generation thinQ!TM 650V SiC Schottky Diode

1 Description Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Qualified accordin

文件：1.1747 Mbytes 页数：11 Pages

Infineon

英飞凌