IDW10G65C5

650V SiC thinQ!??Generation 5 diodes

Features ■V₂at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (₁175°C) ■Improvedsurgecapability ■Pb-freeleadplating ☐10yearsmanufacturingof

IDW10G65C5

Marking：D1065C5；Package：PG-TO247-3；5t h Generation thinQ!TM 650V SiC Schottky Diode

1Description Features Revolutionarysemiconductormaterial-SiliconCarbide Benchmarkswitchingbehavior Noreverserecovery/Noforwardrecovery Temperatureindependentswitchingbehavior Highsurgecurrentcapability Pb-freeleadplating;RoHScompliant Qualifiedaccordin

IDW10G65C5_V01

5t h Generation thinQ!TM 650V SiC Schottky Diode

1Description Features Revolutionarysemiconductormaterial-SiliconCarbide Benchmarkswitchingbehavior Noreverserecovery/Noforwardrecovery Temperatureindependentswitchingbehavior Highsurgecurrentcapability Pb-freeleadplating;RoHScompliant Qualifiedaccordin

IDW10G65C5_12

ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

IDW10G65C5FKSA1

Package：TO-247-3；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 10A TO247-3

IDW10G65C5XKSA1

Package：TO-247-3；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 10A TO247-3