650V SiC thinQ!??Generation 5 diodes

Features ■ V₂ at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (₁175°C) ■ Improved surge capability ■ Pb-free lead plating ☐10 years manufacturing of

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Infineon

英飞凌

丝印：D1065C5；Package：PG-TO247-3；5t h Generation thinQ!TM 650V SiC Schottky Diode

1 Description Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Qualified accordin

文件：1.1747 Mbytes 页数：11 Pages

Infineon

英飞凌

CoolSiC™ 肖特基二极管

CoolSiC™ generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics a • V br at 650V\n• Improved figure of merit (Q c x V f)\n• No reverse recovery charge\n• Soft switching reverse recovery waveform\n• Temperature independent switching behavior\n• High operating temperature (T j max 175°C)\n• Improved surge capability\n• Pb-free lead plating\n\n优势:\n• Higher safety ma;

Infineon

英飞凌

5t h Generation thinQ!TM 650V SiC Schottky Diode

1 Description Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Qualified accordin

文件：1.1747 Mbytes 页数：11 Pages

Infineon

英飞凌

ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

文件：1.17543 Mbytes 页数：11 Pages

Infineon

英飞凌

Package：TO-247-3；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 10A TO247-3

Infineon

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 10A TO247-3

Infineon

英飞凌