IDWD10G120C5

1200 V Silicion Carbide Schottky diode in TO-247-2 package

The CoolSiC™ Schottky diodes generation 5 1200 V, 10 A is now available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes commonly used today. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with; • No reverse recovery current, no forward recovery voltage\n• Temperature-independent switching behavior\n• Low forward voltage even at high operating temperature\n• Tight forward voltage distribution\n• High surge current capability\n• Real two-pin package with 8.7 mm creepage and clearance distanc;

IDWD10G120C5

丝印：D1012C5；Package：PG-TO247-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features Noreverserecoverycurrent/noforwardrecovery Highsurgecurrentcapability Temperatureindependentswitchingbehaviour Lowforwardvoltageevenathighoperatingtemperature Tightforwardvoltagedistribution Specifieddv/dtruggedness Pb-freeleadplating;RoHS

IDWD10G120C5XKSA1

Package：TO-247-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SIC SCHOTTKY 1200V 10A TO247-2

IDH10G120C5

SiliconCarbideSchottkyDiode

IDK10G120C5

5thGenerationCoolSiCTM1200VSchottkyDiode

Features Revolutionarysemiconductormaterial-SiliconCarbide Noreverserecoverycurrent/noforwardrecovery Temperatureindependentswitchingbehaviour Lowforwardvoltageevenathighoperatingtemperature Tightforwardvoltagedistribution Excellentthermalperformance 

IDM10G120C5

SiliconCarbideSchottkyDiode