IDK10G120C5

丝印：D1012C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features Revolutionarysemiconductormaterial-SiliconCarbide Noreverserecoverycurrent/noforwardrecovery Temperatureindependentswitchingbehaviour Lowforwardvoltageevenathighoperatingtemperature Tightforwardvoltagedistribution Excellentthermalperformance 

IDK10G120C5

1200 V Silicon Carbide Schottky diode in D²PAK real 2-pin package; \n优势:\n• Enabling higher frequency / increased power density in compact designs\n• System size/cost saving due to reduced heatsink requirements and smaller magnetics\n• Reduce a risk of partial discharge on the surface (real 2-pin)\n• System efficiency improvement over Si diodes\n• System reliability improvement\n• Reduced EMI\n• RoHS II standard compliant (Pb-free die attach)\n;

IDK10G120C5XTMA1

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SIC DISCRETE

IDM10G120C5

SiliconCarbideSchottkyDiode

IDW10G120C5B

Revolutionarysemiconductormaterial-SiliconCarbide

IDWD10G120C5

5thGenerationCoolSiCTM1200VSchottkyDiode

Features Noreverserecoverycurrent/noforwardrecovery Highsurgecurrentcapability Temperatureindependentswitchingbehaviour Lowforwardvoltageevenathighoperatingtemperature Tightforwardvoltagedistribution Specifieddv/dtruggedness Pb-freeleadplating;RoHS