IDWD10G120C5中文资料采用 TO-247-2 封装的 1200 V 碳化硅肖特基二极管数据手册Infineon规格书

描述 Description

The CoolSiC™ Schottky diodes generation 5 1200 V, 10 A is now available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes commonly used today. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative. The output power of  PFC and DC-DC stages can thus be substantially increased, by 40% or more. Other than negligible switching losses – the signature feature of SiC Schottkys – CoolSiC™ Generation 5  products come with best-in-class forward voltage (VF), the slightest increase of VF with temperature and highest surge current capability. The result is a series of products delivering market-leading efficiency and more system reliability at an attractive cost point.

特性 Features

• No reverse recovery current, no forward recovery voltage
• Temperature-independent switching behavior
• Low forward voltage even at high operating temperature
• Tight forward voltage distribution
• High surge current capability
• Real two-pin package with 8.7 mm creepage and clearance distances

优势:
• Easy plug and play with silicon diodes
• System efficiency improvement over Si diodes
• Enabling higher frequency / increased power density solutions
• System reliability improvement

应用 Application

• EV-Charging
• Welding
• CAV
• Solutions for solar energy systems
• Motor and Control Drives
• UPS
• Industrial SMPS

简介

IDWD10G120C5属于分立半导体产品的二极管-整流器-单。由制造生产的IDWD10G120C5二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。