丝印：D10A100；Package：PowerDI5；10A TRENCH SCHOTTKY BARRIER RECTIFIER PowerDI5

Description and Applications Packaged in the compact thermally efficient PowerDI ® 5, the SDT10A100P5 provides very low VF and excellent reverse leakage stability at high temperatures. It is ideal for use as a rectifier, freewheel diode or blocking diode in:  DC-DC Converters  AC-DC Adap

文件：626.44 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：D10A100；Package：PowerDI5；10A TRENCH SCHOTTKY BARRIER RECTIFIER PowerDI5

Description and Applications Packaged in the compact thermally efficient PowerDI ® 5, the SDT10A100P5 provides very low VF and excellent reverse leakage stability at high temperatures. It is ideal for use as a rectifier, freewheel diode or blocking diode in:  DC-DC Converters  AC-DC Adap

文件：626.44 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：D10A100；Package：PowerDI5；10A TRENCH SCHOTTKY BARRIER RECTIFIER PowerDI5

Description and Applications Packaged in the compact thermally efficient PowerDI ® 5, the SDT10A100P5 provides very low VF and excellent reverse leakage stability at high temperatures. It is ideal for use as a rectifier, freewheel diode or blocking diode in:  DC-DC Converters  AC-DC Adap

文件：626.44 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：D10A100；Package：PowerDI5；10A TRENCH SCHOTTKY BARRIER RECTIFIER PowerDI5

Description and Applications Packaged in the compact thermally efficient PowerDI ® 5, the SDT10A100P5 provides very low VF and excellent reverse leakage stability at high temperatures. It is ideal for use as a rectifier, freewheel diode or blocking diode in:  DC-DC Converters  AC-DC Adap

文件：626.44 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：D10NF10；Package：TO-252-3L；N-Channel 100-V (D-S) MOSFET

Features @ Ros = 100m @VGS=10V ® Super high density cell design for extremely low RDS(ON) ® Exceptional on-resistance and maximum DC current

文件：2.69134 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias circuits\n• Low noise\n• High gain - 16 dB minimum;

TT Electronics

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias circuits\n• Low noise\n• High gain - 16 dB minimum;

TT Electronics

旋转位置传感器

Honeywell

霍尼韦尔

包装：散装 类别：工业自动化与控制 保护继电器和系统 描述：D100-19X=WILMAR DIFFERENTIAL 1

TE Connectivity Aerospace, Defense and Marine

包装：散装 类别：电缆组件 套管 - 音频电缆 描述：1 TO 4 SPLITTER CABLE

Ease Electronics