Switching Diode High Speed Switching Diode Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

文件：207.62 Kbytes 页数：2 Pages

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Low Leakage Diode Low Leakage Diode Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.5 x 17.5 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 8.0 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 6,000Å

文件：209.87 Kbytes 页数：2 Pages

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Low Leakage Diode Picoampere Diode Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.5 X 9.5 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 2.5 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 13,000Å

文件：211.1 Kbytes 页数：2 Pages

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The CPD65-BAV45 is a silicon 50mA, 35 Volt diode ideal for low leakage applications.

The CPD65-BAV45 is a silicon 50mA, 35 Volt diode ideal for low leakage applications. MECHANICAL SPECIFICATIONS: Die Size 11.8 x 11.8 MILS Die Thickness 8.0 MILS Anode Bonding Pad Size 2.35 MILS DIAMETER Top Side Metalization Al – 15,000Å Back Side Metalization Au – 18,000Å

文件：545.73 Kbytes 页数：4 Pages

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Low Leakage Diode Low Leakage Diode Chip

PROCESS DETAILS Die Size 17.5 x 17.5 MILS Die Thickness 5.9 MILS Anode Bonding Pad Area 7.9 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å

文件：728.97 Kbytes 页数：2 Pages

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1 Amp Glass Passivated Rectifier Chip

General Purpose Rectifier 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 42.5 x 42.5 MILS Die Thickness 12.5 MILS Anode Bonding Pad Area 32 x 32 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization Ni/

文件：405.37 Kbytes 页数：2 Pages

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Low Leakage Diode Low Leakage Switching Diode Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 15,000Å Back Side Metalization Au - 18,000Å

文件：213.7 Kbytes 页数：2 Pages

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Bridge Rectifier Monolithic Quad Diode Bridge Chip

PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 (+DC) 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC) 3.0 x 4.0 MILS Bonding Pad Area 4 (AC) 3.0 x 7.0 MILS Top Side Metalization Al - 12,000Å Back Side Me

文件：222.57 Kbytes 页数：2 Pages

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Switching Diode Monolithic Isolated Quad Switching Diode Chip

PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Anode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS Cathode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS Top Side Metalization Al - 12,000Å Back Side Metalization Au - 5,000Å

文件：225.68 Kbytes 页数：2 Pages

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Schottky Diode 1.0A Schottky Diode Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 32 x 32 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 26 x 26 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å

文件：36.88 Kbytes 页数：1 Pages

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