Switching Diode Low Leakage Switching Diode Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.35 x 3.35 MILS Top Side Metalization Al - 15,000Å Back Side Metalization Au-As - 12,000Å

文件：208.4 Kbytes 页数：2 Pages

Central

Schottky Diode High Voltage Schottky Diode Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 7.9 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

文件：178.32 Kbytes 页数：2 Pages

Central

Schottky Diode High Voltage Schottky Diode Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

文件：157.84 Kbytes 页数：2 Pages

Central

High Voltage Schottky Diode Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 5.9 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

文件：375.07 Kbytes 页数：2 Pages

Central

High Current Switching Diode Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 12.8 x 12.8 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 5.1 x 5.1 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 10,000Å

文件：407.18 Kbytes 页数：2 Pages

Central

0.5 Amp Schottky Diode Chip

PROCESS DETAILS Die Size 20 x 20 MILS Die Thickness 5.9 MILS Anode Bonding Pad Area 16 x 16 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å

文件：671.36 Kbytes 页数：2 Pages

Central

Schottky Diode 500mA Low VF Schottky Diode Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 16.4 x 16.4 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å

文件：126.41 Kbytes 页数：2 Pages

Central

Schottky Diode Silicon High Current Schottky Diode Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 16 x 16 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å

文件：30.69 Kbytes 页数：1 Pages

Central

丝印：.E1V5；Package：DFN2510-10；SMD ESD Protection Diode

Features - Low leakage current. - IEC 61000-4-2 (ESD) ±16kV(Contact), ±18kV(air). - Working voltage: 1.5V

文件：502.55 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：.E1V8；Package：DFN2510-10；SMD ESD Protection Diode

Features - Low leakage current. - IEC 61000-4-2 (ESD) ±16kV(Contact), ±18kV(air). - Working voltage: 1.8V

文件：502.67 Kbytes 页数：4 Pages

COMCHIP

典琦