1 Amp Schottky Diode Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 32 x 32 MILS Die Thickness 5.9 MILS Anode Bonding Pad Area 27 x 27 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å

文件：408.69 Kbytes 页数：2 Pages

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Schottky Rectifier Die 1.0 Amp, 20 Volt

The CPD76X-1N5817 is a silicon 1.0 Amp, 20 Volt Schottky rectifi er ideal for all types of commercial, industrial, entertainment, and computer applications. MECHANICAL SPECIFICATIONS: Die Size 32 x 32 MILS Die Thickness 5.9 MILS Anode Bonding Pad Size 27 x 27 MILS Top Side Metaliz

文件：321.84 Kbytes 页数：3 Pages

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Switch Diode High Voltage Switching Diode Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 9.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

文件：226.79 Kbytes 页数：2 Pages

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Switching Diode High Voltage Switching Diode Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å

文件：231.62 Kbytes 页数：2 Pages

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Schottky Diode High Current, Low VF Schottky Diode Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.6 x 14.6 MILS Die Thickness 5.5 MILS Anode Bonding pad Area 11.8 x 11.8 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

文件：31.17 Kbytes 页数：1 Pages

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Switching Diode High Speed Switching Diode Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.35 x 3.35 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å

文件：128.03 Kbytes 页数：2 Pages

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High Speed Switching Diode Die 0.15 Amp, 100 Volt

The CPD83V-1N4148 is a silicon high speed switching diode ideal for all types of commercial, industrial, entertainment, and computer applications. MECHANICAL SPECIFICATIONS: Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Size 3.35 x 3.35 MILS Top Side Metalization

文件：419.16 Kbytes 页数：4 Pages

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Low Leakage Schottky Diode Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.6 x 14.6 MILS Die Thickness 3.9 MILS Anode Bonding Pad Area 11.8 x 11.8 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

文件：710.35 Kbytes 页数：2 Pages

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High Current Diode Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 12.8 x 12.8 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 5.1 x 5.1 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 10,000Å

文件：458.05 Kbytes 页数：2 Pages

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Switching Diode Low Leakage Switching Diode Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 9.1 MILS Anode Bonding pad Area 3.4 x 3.4 MILS Top Side Metalization Al - 15,000Å Back Side Metalization Au - 18,000Å

文件：30.98 Kbytes 页数：1 Pages

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