Small Signal Transistor PNP - High Current Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 3.75 x 3.75 MILS Emitter Bonding Pad Area 3.75 x 3.75 MILS Top Side Metalization

文件：211.61 Kbytes 页数：2 Pages

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Small Signal Transistor PNP - Darlington Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area 5.3 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

文件：213.6 Kbytes 页数：2 Pages

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Power Transistor PNP - Low Saturation Transistor Chip

PROCESS DETAILS ​​​​​​​ Process EPITAXIAL PLANAR Die Size 41.3 x 41.3 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 9.5 x 9.2 MILS Emitter Bonding Pad Area 12.8 x 10.2 MILS Top Side Metalizati

文件：216.99 Kbytes 页数：2 Pages

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Small Signal Transistor PNP - High Voltage Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

文件：199.95 Kbytes 页数：2 Pages

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Small Signal Transistor PNP - High Voltage Transistor Chip

Small Signal Transistor PNP - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS Top Side Metalization Al - 30,000Å Back Side Me

文件：481.98 Kbytes 页数：2 Pages

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The CP710V-MPSA92 is a silicon PNP transistor designed for high voltage applications.

The CP710V-MPSA92 is a silicon PNP transistor designed for high voltage applications. MECHANICAL SPECIFICATIONS: Die Size 26 x 26 MILS Die Thickness 7.1 MILS Base Bonding Pad Size 6.1 x 4.9 MILS Emitter Bonding Pad Size 5.2 x 5.2 MILS Top Side Metalization Al – 30,000Å Bac

文件：388.13 Kbytes 页数：3 Pages

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Power Transistor PNP - Amp/Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 75 x 75 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 17 x 12 MILS Emitter Bonding Pad Area 31 x 12 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ti/Ni/Ag - 11,300Å

文件：66.94 Kbytes 页数：2 Pages

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Small Signal Transistor PNP - High Current Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 40 x 40 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 7.9 x 8.7 MILS Emitter Bonding Pad Area 9.0 x 14 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

文件：210.76 Kbytes 页数：2 Pages

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Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 40 x 40 MILS Die Thickness 7.0 MILS Base Bonding Pad Area 7.9 x 8.7 MILS Emitter Bonding Pad Area 9.0 x 14 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

文件：463.32 Kbytes 页数：2 Pages

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Small Signal Transistor PNP - High Voltage Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

文件：212.24 Kbytes 页数：2 Pages

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