Small Signal MOSFET Transistor P-Channel Enhancement-Mode Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.7 x 17.7 MILS Die Thickness 5.5 MILS Gate Bonding Pad Area 4.7 x 4.7 MILS Source Bonding Pad Area 6.1 x 7.9 MILS Top Side Metalization Al-Si - 35,000Å Back Side Metalization Au - 12,000Å

文件：704.37 Kbytes 页数：2 Pages

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Small Signal Transistor PNP- Saturated Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 30 x 30 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.85 x 4.20 MILS Emitter Bonding Pad Area 7.35 x 3.75 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 15,000Å

文件：80.65 Kbytes 页数：1 Pages

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Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 30 x 30 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.9 x 4.2 MILS Emitter Bonding Pad Area 7.4 x 3.8 MILS Top Side Metalization Al - 3

文件：396.16 Kbytes 页数：2 Pages

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P-Channel MOSFET Die Enhancement-Mode

FEATURES: • Low on-resistance, rDS(ON) • Low profile geometry • Low gate charge, Qgs • Metalization suitable for standard die attach technologies • High drain current density • Top metalization optimized for wire bonding APPLICATIONS: • Power management • Load switching • Motor drives • DC

文件：959.36 Kbytes 页数：6 Pages

CENTRAL

P-Channel MOSFET Die Enhancement-Mode

FEATURES: • Low on-resistance, rDS(ON) • Low profile geometry • Low gate charge, Qgs • Metalization suitable for standard die attach technologies • High drain current density • Top metalization optimized for wire bonding APPLICATIONS: • Power management • Load switching • Motor drives • DC

文件：959.36 Kbytes 页数：6 Pages

CENTRAL

P-Channel MOSFET Die Enhancement-Mode

FEATURES: • Low on-resistance, rDS(ON) • Low profile geometry • Low gate charge, Qgs • Metalization suitable for standard die attach technologies • High drain current density • Top metalization optimized for wire bonding APPLICATIONS: • Power management • Load switching • Motor drives • DC

文件：959.36 Kbytes 页数：6 Pages

CENTRAL

MOSFET Transistor P-Channel Enhancement-Mode MOSFET Chip

PROCESS DETAILS Die Size 39 x 27 MILS Die Thickness 7.5 MILS Gate Bonding Pad Area 6.5 x 6.5 MILS Source Bonding Pad Area 30 x 20 MILS Top Side Metalization Al - 40,000Å Back Side Metalization Ti/Ni/Ag - 1,000Å/3,000Å/10,000Å

文件：658.22 Kbytes 页数：2 Pages

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P-Channel MOSFET Die Enhancement-Mode

APPLICATIONS: • Load switching • Power management • DC-DC conversion FEATURES: • Low on-resistance, rDS(ON) • Low gate charge, Qgs • High drain current density

文件：942.14 Kbytes 页数：6 Pages

CENTRAL

P-Channel MOSFET Die Enhancement-Mode

APPLICATIONS: • Load switching • Power management • DC-DC conversion FEATURES: • Low on-resistance, rDS(ON) • Low gate charge, Qgs • High drain current density

文件：942.14 Kbytes 页数：6 Pages

CENTRAL

P-Channel MOSFET Die Enhancement-Mode

APPLICATIONS: • Load switching • Power management • DC-DC conversion FEATURES: • Low on-resistance, rDS(ON) • Low gate charge, Qgs • High drain current density

文件：942.14 Kbytes 页数：6 Pages

CENTRAL