P-Channel MOSFET Die Enhancement-Mode

APPLICATIONS: • Load switching • Power management • DC-DC conversion FEATURES: • Low on-resistance, rDS(ON) • Low gate charge, Qgs • High drain current density

文件：942.14 Kbytes 页数：6 Pages

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Small Signal Transistor PNP - Low VCE(SAT) Transistor Chip

PROCESS DETAILS Die Size 26 x 26 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 5.5 x 5.5 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

文件：734.67 Kbytes 页数：2 Pages

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Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13.7 x 13.7 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization Au - 12,000Å

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The CP788X-2N5087 is a silicon PNP transistor designed for general purpose applications.

The CP788X-2N5087 is a silicon PNP transistor designed for general purpose applications. MECHANICAL SPECIFICATIONS: Die Size 13.7 x 13.7 MILS Die Thickness 5.9 MILS Base Bonding Pad Size 4.0 x 4.0 MILS Emitter Bonding Pad Size 5.5 x 5.5 MILS Top Side Metalization Al-Si – 17,00

文件：712.21 Kbytes 页数：3 Pages

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Small Signal Transistor PNP - Amp/Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.0 MILS Base Bonding Pad Area 3.7 x 3.7 MILS Emitter Bonding Pad Area 3.7 x 3.7 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

文件：134.59 Kbytes 页数：2 Pages

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Smal Signal Transistor PNP - Amp/Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.0 MILS Base Bonding Pad Area 3.7 x 3.7 MILS Emitter Bonding Pad Area 3.7 x 3.7 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

文件：650.89 Kbytes 页数：2 Pages

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Small Signal MOSFET Transistor P - Channel Enhancement-Mode Transistor Chip

Small Signal MOSFET Transistor P - Channel Enhancement-Mode Transistor Chip PROCESS DETAILS Die Size 15.7 x 15.7 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 9.1 x 8.1 MILS Top Side Metalization Al-Si - 35,000Å Back Side Metaliz

文件：742.36 Kbytes 页数：2 Pages

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PELTIER MODULE

文件：724.2 Kbytes 页数：8 Pages

CUI

P-Channel JFET Die

文件：465.81 Kbytes 页数：9 Pages

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PNP - High Voltage Transistor Die

文件：530.8 Kbytes 页数：9 Pages

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