Small Signal Transistor PNP- Saturated Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 30 x 30 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.85 x 4.20 MILS Emitter Bonding Pad Area 7.35 x 3.75 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 15,000Å

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Small Signal Transistor PNP- Saturated Switch Transistor Chip

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Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 30 x 30 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.9 x 4.2 MILS Emitter Bonding Pad Area 7.4 x 3.8 MILS Top Side Metalization Al - 3

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PNP - General Purpose Transistor Die 1.0 Amp, 40 Volt

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Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip

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Chip Form: Saturated Switch Transistor

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Package：模具；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANSISTOR

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