P-Channel MOSFET Die Enhancement-Mode

FEATURES: • Low on-resistance, rDS(ON) • Low profile geometry • Low gate charge, Qgs • Metalization suitable for standard die attach technologies • High drain current density • Top metalization optimized for wire bonding APPLICATIONS: • Power management • Load switching • Motor drives • DC

文件：959.36 Kbytes 页数：6 Pages

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P-Channel MOSFET Die Enhancement-Mode

FEATURES: • Low on-resistance, rDS(ON) • Low profile geometry • Low gate charge, Qgs • Metalization suitable for standard die attach technologies • High drain current density • Top metalization optimized for wire bonding APPLICATIONS: • Power management • Load switching • Motor drives • DC

文件：959.36 Kbytes 页数：6 Pages

Central

P-Channel MOSFET Die Enhancement-Mode

FEATURES: • Low on-resistance, rDS(ON) • Low profile geometry • Low gate charge, Qgs • Metalization suitable for standard die attach technologies • High drain current density • Top metalization optimized for wire bonding APPLICATIONS: • Power management • Load switching • Motor drives • DC

文件：959.36 Kbytes 页数：6 Pages

Central

Chip Form: P-Chan Enhancement Mode MOSFET

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