Small Signal Transistor PNP - High Voltage Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

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Small Signal Transistor PNP - High Voltage Transistor Chip

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Small Signal Transistor PNP - High Voltage Transistor Chip

Small Signal Transistor PNP - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS Top Side Metalization Al - 30,000Å Back Side Me

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The CP710V-MPSA92 is a silicon PNP transistor designed for high voltage applications.

The CP710V-MPSA92 is a silicon PNP transistor designed for high voltage applications. MECHANICAL SPECIFICATIONS: Die Size 26 x 26 MILS Die Thickness 7.1 MILS Base Bonding Pad Size 6.1 x 4.9 MILS Emitter Bonding Pad Size 5.2 x 5.2 MILS Top Side Metalization Al – 30,000Å Bac

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Small Signal Transistor PNP - High Voltage Transistor Chip

文件：481.9 Kbytes 页数：2 Pages

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PNP - High Voltage Transistor Die

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PNP - High Voltage Transistor Die

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P-Channel JFET Die

文件：465.81 Kbytes 页数：9 Pages

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