Power Transistor PNP - Amp/Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 75 x 75 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 17 x 12 MILS Emitter Bonding Pad Area 31 x 12 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ti/Ni/Ag - 11,300Å

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Power Transistor PNP - Amp/Switch Transistor Chip

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