Power Transistor PNP - Amp/Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 75 x 75 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 17 x 12 MILS Emitter Bonding Pad Area 31 x 12 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ti/Ni/Ag - 11,300Å

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Power Transistor PNP - Amp/Switch Transistor Chip

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Asymmetrical TVS Diode for Extended Common-Mode RS-485

Description The SM712 transient voltage suppressor (TVS) diode is designed for asymmetrical (12V to -7V ) protection in multi-point data transmission standard RS-485 applications. The SM712 may be used to protect devices from transient voltages resulting from electrostatic discharge (ESD), electr

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SEMTECH

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Asymmetrical TVS Diode for Extended Common-Mode RS-485

Description The SM712 transient voltage suppressor (TVS) diode is designed for asymmetrical (12V to -7V ) protection in multi-point data transmission standard RS-485 applications. The SM712 may be used to protect devices from transient voltages resulting from electrostatic discharge (ESD), electr

文件：147.94 Kbytes 页数：6 Pages

SEMTECH

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LOW DROPOUT REGULATOR

DESCRIPTION TK712xx is a low dropout, linear regulator. Since a PNP power transistor is used, dropout voltage is very low, making it possible to maintain stable output voltage even as the battery decreases. This allows longer battery life. The TK712xx has a noise bypass pin available for noise re

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TOKO