Small Signal Transistors PNP - Low VCE(SAT) Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.7 x 17.7 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.8 x 3.8 MILS Emitter Bonding Pad Area 3.8 x 3.8 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization Au - 12,000Å

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Small Signal Transistors PNP - Low VCE(SAT) Transistor Chip

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PNP - Low VCE(SAT) Transistor Die 1.0 Amp, 25 Volt

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Small Signal Transistors PNP - Low VCE(SAT) Transistor Chip

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Chip Form: Low VCE(sat) Transistor Central Semiconductor

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