Small Signal Transistor PNP - High Voltage Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

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Small Signal Transistors PNP - High Voltage Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19.7 x 19.7 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

文件：192.89 Kbytes 页数：2 Pages

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PNP - High Voltage Transistor Die

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PNP - High Voltage Transistor Die

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Small Signal Transistors PNP - High Voltage Transistor Chip

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