Small Signal Transistor PNP - High Current Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 40 x 40 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 7.9 x 8.7 MILS Emitter Bonding Pad Area 9.0 x 14 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

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Small Signal Transistor PNP - High Current Transistor Chip

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Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 40 x 40 MILS Die Thickness 7.0 MILS Base Bonding Pad Area 7.9 x 8.7 MILS Emitter Bonding Pad Area 9.0 x 14 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

文件：463.32 Kbytes 页数：2 Pages

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PNP - High Current Transistor Die 2.0 Amp, 80 Volt

文件：525.6 Kbytes 页数：4 Pages

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