CGHV37400F中文资料400 W; 3300 - 3700 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems数据手册MACOM规格书

描述 Description

The CGHV37400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV37400F ideal for 3.3 - 3.7 GHz S-Band radar amplifier applications. The transistor is matched to 50-ohms on the input and 50-ohms on the output. The CGHV37400 is based on The high power density 50 V;  0.4 µm GaN on silicon carbide (SiC) foundry process. The transistor is supplied in a ceramic/metal flange package.

特性 Features

·3.3 – 3.8 GHz Operation
·525 W Typical Output Power
·11.5 dB Power Gain
·55% Typical Drain Efficiency
·50 Ohm Internally Matched
·<0.3 dB Pulsed Amplitude Droop

应用 Application

·S-Band Radar Amplifiers