CGHV35400F-AMP数据手册MACOM中文资料规格书

描述 Description

The CGHV35400F1 is a gallium-nitride (GaN) fully matched IMFET housed in a thermally enhanced air cavity package. Operating at 50V, the device is capable of 500W of pulsed output power, with 2mS pulse lengths at 20% duty cycle.

特性 Features

·2.9 – 3.5 GHz Operation
·500 W Typical Output Power
·11 dB Power Gain
·70% Typical Drain Efficiency
·50 Ohm Internally Matched
·<0.3 dB Pulsed Amplitude Droop

应用 Application

·Cable Loss Compensation