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CGHV1J070D-GP4中文资料70 W; 18.0 GHz; GaN HEMT Die数据手册MACOM规格书
CGHV1J070D-GP4规格书详情
描述 Description
The CGHV1J070D is a high-voltage gallium-nitride (GaN) high electron mobility transistor (HEMT) on a silicon-carbide substrate; using a 0.25- μm gate length fabrication process. This GaN-on-SiC product offers superior high-frequency; high-efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
特性 Features
·60% Typ. PAE at 10 GHz
·70 W Typical PSAT
·40 V Operation
·Up to 18 GHz Operation
应用 Application
·Satellite Communications
·Broadband Amplifiers
·High Efficiency Amplifiers
·Marine Radar
·Pleasure Craft Radar
·Port Vessel Traffic Services
·PTP Communications Links
技术参数
- 制造商编号
：CGHV1J070D-GP4
- 生产厂家
：MACOM
- Min Frequency(MHz)
：0
- Max Frequency(MHz)
：18000
- Peak Output Power(W)
：70
- Gain(dB)
：17.0
- Efficiency(%)
：60
- Operating Voltage(V)
：40
- Form
：Discrete Bare Die
- Package Category
：Die
- Technology
：GaN-on-SiC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE |
638 |
原装正品 |
询价 | ||||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
询价 | ||
Cree/Wolfspeed |
23+ |
9000 |
原装正品，支持实单 |
询价 | |||
CREE |
24+ |
N/A |
90000 |
进口原装现货假一罚十价格合理 |
询价 | ||
Cree/Wolfspeed |
2022+ |
440162 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
CREE |
24+ |
SMD |
1680 |
一级代理原装进口现货 |
询价 | ||
MACOM |
24+ |
5000 |
原装军类可排单 |
询价 | |||
CREE |
2308+ |
原厂原包 |
6850 |
十年专业专注 优势渠道商正品保证 |
询价 | ||
Cree/Wolfspeed |
22+ |
9000 |
原厂渠道,现货配单 |
询价 | |||
Cree |
22+ |
NA |
101 |
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询价 |
