CGHV1F006数据手册开发板套件编程器的射频评估开发套件开发板规格书PDF

描述 Description

The CGHV1F006 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT)  designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities. The device can be deployed for L; S; C; X and Ku-band amplifier applications. The data sheet specifications are based on a C-Band (5.5 – 6.5-GHz) amplifier. Additional application circuits are available for C-Band at 5.8 GHz - 7.2 GHz and X-Band at 7.9 - 8.4 GHz and 8.5 – 9.6 GHz. The CGHV1F006 operates on a 40-volt rail circuit while housed in a 3-mm x 4-mm; surface-mount; dual-flat-no-lead (DFN) package. Under reduced power; the transistor can operate below 40 V to as low as 20-V VDD; maintaining high gain and efficiency. 

特性 Features

·Up to 15 GHz Operation
·8 W Typical Output Power
·17 dB Gain at 6.0 GHz
·15 dB Gain at 9.0 GHz
·Application circuits for 5.8 – 7.2 GHz; 7.9 – 8.4 GHz; and 8.5 – 9.6 GHz.
·High degree of APD and DPD correction can be applied

应用 Application

·Test Instrumentation
·Cellular Infrastructure
·Broadband Amplifiers
·2-Way Private Radio
·Class A, AB
·Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms