CGHV1F025中文资料25 W; DC - 15 GHz; 40 V; GaN HEMT数据手册MACOM规格书
CGHV1F025规格书详情
描述 Description
The CGHV1F025S is an unmatched; gallium-nitride (GaN); high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities. The device can be deployed for L; S; C; X and Ku-band amplifier applications. The data sheet specifications are based on an X-Band (8.9 – 9.6-GHz) amplifier. The CGHV1F025S operates on a 40-volt rail circuit while housed in a 3-mm x 4-mm; surface-mount; dual-flat-no-lead (DFN) package. Under reduced power; the transistor can operate below 40-V to as low as 20-V VDD; maintaining high gain and efficiency.
特性 Features
·Up to 15 GHz Operation
·25 W Typical Output Power
·11 dB Gain at 9.4 GHz
·Up to 15 GHz Operation
应用 Application
·L, S, C, X and Ku-Band Amplifiers
技术参数
- 制造商编号
：CGHV1F025
- 生产厂家
：MACOM
- Min Frequency(MHz)
：0
- Max Frequency(MHz)
：15000
- Peak Output Power(W)
：25
- Gain(dB)
：11.0
- Efficiency(%)
：51
- Operating Voltage(V)
：40
- Form
：Packaged Discrete Transistor
- Package Category
：Surface Mount
- Technology
：GaN-on-SiC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE |
638 |
原装正品 |
询价 | ||||
MACOM |
25+ |
NV |
2025424 |
明嘉莱只做原装正品现货 |
询价 | ||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
询价 | ||
CREE(科锐) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
CREE |
17+ |
BGA |
60000 |
保证原装进口现货可开17%增值税发票 |
询价 | ||
Cree/Wolfspeed |
23+ |
12DFN (4x3) |
9000 |
原装正品，支持实单 |
询价 | ||
CREE |
24+ |
N/A |
90000 |
进口原装现货假一罚十价格合理 |
询价 | ||
CREE/科锐 |
2447 |
20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
CREE(科锐) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
Cree/Wolfspeed |
2022+ |
模具 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
