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CGHV1J006D-GP4中文资料6 W; 18.0 GHz; GaN HEMT Die数据手册MACOM规格书
CGHV1J006D-GP4规格书详情
描述 Description
The CGHV1J006D is a high-voltage gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on a silicon-carbide substrate; using a 0.25-?m gate-length fabrication process. This GaN-on-SiC product offers superior high-frequency; high-efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
特性 Features
·17 dB Typ. Small Signal Gain at 10 GHz
·60% Typ. PAE at 10 GHz
·6 W Typical Psat
·40 V Operation
·Up to 18GHz Operation
应用 Application
·Satellite Communications
·Broadband Amplifiers
·High Efficiency Amplifiers
·Marine Radar
·Pleasure Craft Radar
·Port Vessel Traffic Services
·PTP Communications Links
技术参数
- 制造商编号
：CGHV1J006D-GP4
- 生产厂家
：MACOM
- Min Frequency(MHz)
：0
- Max Frequency(MHz)
：18000
- Peak Output Power(W)
：6
- Gain(dB)
：17.0
- Efficiency(%)
：60
- Operating Voltage(V)
：40
- Form
：Discrete Bare Die
- Package Category
：Die
- Technology
：GaN-on-SiC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE(科锐) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
CREE/科锐 |
23+ |
1000000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
MACOM |
25+ |
NV |
2025424 |
明嘉莱只做原装正品现货 |
询价 | ||
CREE |
24+ |
SMD |
1680 |
一级代理原装进口现货 |
询价 | ||
CREE |
18+ |
BGA |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
Cree/Wolfspeed |
22+ |
Die |
9000 |
原厂渠道,现货配单 |
询价 | ||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
询价 | ||
CREE |
24+ |
N/A |
90000 |
进口原装现货假一罚十价格合理 |
询价 | ||
CREE/科锐 |
14+ |
die |
50 |
CREE优势订货-军工器件供应商 |
询价 | ||
CREE |
638 |
原装正品 |
询价 |
