6 W; 18.0 GHz; GaN HEMT Die

The CGHV1J006D is a high-voltage gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on a silicon-carbide substrate; using a 0.25-?m gate-length fabrication process. This GaN-on-SiC product offers superior high-frequency; high-efficiency features. It is ideal for a variety of applications ·17 dB Typ. Small Signal Gain at 10 GHz\n·60% Typ. PAE at 10 GHz\n·6 W Typical Psat\n·40 V Operation\n·Up to 18GHz Operation;

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Package：模具；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET HEMT 40V DIE

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MACOM

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