50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT

Description Wolfspeed’s CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to

文件：1.62378 Mbytes 页数：13 Pages

WOLFSPEED

50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT

文件：1.14818 Mbytes 页数：13 Pages

Cree

科锐

50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched GaN HEMT

The CGHV96050F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arseni ·8.4 – 9.6 GHz Operation\n·80 W POUT typical\n·10 dB Power Gain\n·55 % Typical PAE\n·50 Ohm Internally Matched\n·<0.1 dB Power Droop;

MACOM

50-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output-Matched GaN HEMT

8.4 – 9.6 GHz Operation80 W POUT typical10 dB Power Gain55 % Typical PAE50 Ohm Internally Matched<0.1 dB Power Droop • 8.4 – 9.6 GHz Operation\n• 80 W POUT typical\n• 10 dB Power Gain\n• 55 % Typical PAE\n• 50 Ohm Internally Matched\n• <0.1 dB Power Droop;

MACOM

包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：TEST FIXTURE FOR CGHV96050F2

WOLFSPEED