CGHV96050F2中文资料50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched GaN HEMT数据手册MACOM规格书

描述 Description

The CGHV96050F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

特性 Features

·8.4 – 9.6 GHz Operation
·80 W POUT typical
·10 dB Power Gain
·55 % Typical PAE
·50 Ohm Internally Matched
·<0.1 dB Power Droop

应用 Application

·Air Traffic Control
·Marine Radar
·Maritime Vessel Traffic Control
·Port Security
·Weather Monitoring