CGHV96050F1中文资料50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT数据手册MACOM规格书

描述 Description

The CGHV96050F1 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

特性 Features

·7.9 – 8.4 GHz Operation
·80 W POUT typical
·>13 dB Power Gain
·33 % Typical Linear PAE
·50 Ohm Internally Matched
·<0.1 dB Power Droop

应用 Application

·SATCOM
·Terrestrial Broadband