CGHV60075D5-GP4数据手册MACOM中文资料规格书

描述 Description

The CGHV60075D5 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated-electron-drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

特性 Features

·65% Typical Power Added Efficiency at 4 GHz
·60% Typical Power Added Efficiency at 6 GHz
·75 W Typical PSAT
·50 V Operation
·High Breakdown Voltage
·Up to 6 GHz Operation

应用 Application

·Cable Loss Compensation