CGHV40180P数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The CGHV40180 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input unmatched to deliver the best possible instantaneous broadband performance from DC-2.0 GHz. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This device is available in a 2-lead metal/ceramic flange and pill package for optimal electrical and thermal performance.

特性 Features

·Input Unmatched
·180 W (CW) Minimum Pout
·250 W Typical Pout
·24 dB Typical Small Signal Gain
·28 V and 50 V Operation

应用 Application

·Radar
·Medical
·Broadband Amplifiers
·Public Safety VHF-UHF
·Military Communications