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CGHV35120F中文资料120 W; 2.9 - 3.8 GHz; 50 V; GaN HEMT for S-Band Radar Systems数据手册MACOM规格书
CGHV35120F规格书详情
描述 Description
The CGHV35120F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency; high gain; and wide bandwidth capabilities; which makes CGHV35120F ideal for 2.9 - 3.8 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.
特性 Features
·Rated Power = 120 W @ TCASE = 85°C
·Operating Frequency = 2.9 – 3.8 GHz
·Rated Power = 120 W @ TCASE = 85°C
·Rated Power = 120 W @ TCASE = 85°C
·Rated Power = 120 W @ TCASE = 85°C
·Input Matched
·<0.3 dB Pulsed Amplitude Droop
应用 Application
·Test Instrumentation
·Cellular Infrastructure
·Broadband Amplifiers
·2-Way Private Radio
·Class A, AB
·Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms
技术参数
- 制造商编号
：CGHV35120F
- 生产厂家
：MACOM
- Min Frequency(MHz)
：3100
- Max Frequency(MHz)
：3500
- Peak Output Power(W)
：120
- Gain(dB)
：12.8
- Efficiency(%)
：62
- Operating Voltage(V)
：50
- Form
：Packaged Discrete Transistor
- Package Category
：Flange
- Technology
：GaN-on-SiC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE |
三年内 |
1983 |
只做原装正品 |
询价 | |||
CREE |
638 |
原装正品 |
询价 | ||||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
询价 | ||
Cree/Wolfspeed |
23+ |
9000 |
原装正品，支持实单 |
询价 | |||
CREE |
24+ |
N/A |
90000 |
进口原装现货假一罚十价格合理 |
询价 | ||
CREE/科锐 |
2447 |
20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
Cree/Wolfspeed |
2022+ |
440166 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
MACOM |
24+ |
5000 |
原装军类可排单 |
询价 | |||
CREE/科锐 |
23+ |
1000000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
CREE |
2308+ |
原厂原包 |
6850 |
十年专业专注 优势渠道商正品保证 |
询价 |
