CGHV31500F中文资料500W, 2.7 - 3.1 GHz, GaN IMFET数据手册MACOM规格书

描述 Description

The CGHV31500F1 is a gallium-nitride (GaN), fully matched IMFET housed in a thermally enhanced air cavity package. Operating at 50V, the device is capable of 500W of pulsed output power, with 2mS pulse lengths at 20% duty cycle.

特性 Features

·650 W Typical Output Power
·12 dB Power Gain
·65% Typical Drain Efficiency
·50 Ohm Internally Matched
·<0.3 dB Pulsed Amplitude Droop

应用 Application

·S-Band Radar Amplifiers