CGHV27030中文资料30 W; DC - 6.0 GHz; GaN HEMT数据手册MACOM规格书

描述 Description

The CGHV27030S is an unmatched; gallium-nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency; high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications applications with frequencies of 700-960 MHz; 1200-1400 MHz; 1800-2200 MHz; 2500-2700 MHz; and 3300-3700 MHz at both 50 V and 28 V operations. The CGHV27030S is also ideal for tactical communications applications operating from 20-2500 MHz; including land mobile radios. Additional applications include L-Band RADAR and S-Band RADAR. The CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a 3mm x 4mm; surface mount; dual-flat-no-lead (DFN) package. 

特性 Features

·2.5 – 2.7 GHz Operation
·30 W Typical Output Power
·20 dB Gain at 5 W PAVE
·-34 dBc ACLR at 5 W PAVE
·30% efficiency at 5 W PAVE
·High degree of APD and DPD correction can be applied

应用 Application

·Cellular Infrastructure
·S-Band RADAR
·L-Band RADAR
·Tactical Communications